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Nanomembranes: Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor (Adv. Funct. Mater. 41/2014)
Author(s) -
Xiong Kanglin,
Park Sung Hyun,
Song Jie,
Yuan Ge,
Chen Danti,
Leung Benjamin,
Han Jung
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201470271
Subject(s) - materials science , gallium nitride , slicing , nanotechnology , transistor , optoelectronics , nitride , gallium , field effect transistor , mechanical engineering , electrical engineering , voltage , layer (electronics) , metallurgy , engineering
Using a special electrochemical procedure, J. Han and colleagues succeed in slicing off Gallium nitride from a thick and rigid structure into a form of nanomembrane (NM) with a thickness of only hundreds of atomic layers. The NMs presented on page 6503 possess a very favorable transport property, while its two surfaces (top and bottom) present both opportunities and challenges for new applications.