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Transparent Electronics: Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics (Adv. Funct. Mater. 23/2014)
Author(s) -
Chang Seongpil,
Do Yun Seon,
Kim JongWoo,
Hwang Bo Yeon,
Choi Jinnil,
Choi ByungHyun,
Lee YunHi,
Choi Kyung Cheol,
Ju ByeongKwon
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201470151
Subject(s) - materials science , optoelectronics , plasmon , electronics , amorphous solid , transistor , semiconductor , thin film transistor , lithography , nanotechnology , optics , layer (electronics) , electrical engineering , chemistry , physics , organic chemistry , voltage , engineering
Transparent electronic devices demonstrated by K. C. Choi, B.‐K. Ju, and co‐workers show as invisible to the eyes. In order to achieve stable device operatiom, the negative‐bias illumination stressinduced instability must be improved. To achieving this, plasmonic filters engraved by laser interference lithography are integrated with amorphous oxide‐semiconductor thin film transistors. The cut‐off wavelength of plasmonic filters can be designed by controlling the periodic nanopatterns, and cutting off the light, which can affect amorphous oxide semiconductors, thereby realizing the photostable transparent electronic devices.