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Nanomembranes: Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes (Adv. Funct. Mater. 16/2014)
Author(s) -
ElAfandy Rami T.,
Majid Mohammed A.,
Ng Tien Khee,
Zhao Lan,
Cha Dongkyu,
Ooi Boon S.
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201470104
Subject(s) - materials science , gallium nitride , exfoliation joint , threading (protein sequence) , gallium , nitride , dislocation , etching (microfabrication) , nanotechnology , nanowire , indium gallium nitride , optoelectronics , composite material , layer (electronics) , metallurgy , graphene , physics , nuclear magnetic resonance , protein structure
Through UV‐assisted electroless chemical etching, single crystalline gallium nitride nanomembranes are exfoliated by B. S. Ooi and co‐workers on page 2305, with the threading‐dislocation cores selectively detached. This false‐color scanning electron microscope image shows the nanomembrane lying on top of porous gallium nitride. The enlarged region reveals the gallium nitride nanowires (green), formed from threading‐dislocations cores, protruding through the gallium nitride nanomembrane.