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Transparent Electronics: Thermally Stable Transparent Resistive Random Access Memory based on All‐Oxide Heterostructures (Adv. Funct. Mater. 15/2014)
Author(s) -
Shang Jie,
Liu Gang,
Yang Huali,
Zhu Xiaojian,
Chen Xinxin,
Tan Hongwei,
Hu Benlin,
Pan Liang,
Xue Wuhong,
Li RunWei
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201470093
Subject(s) - materials science , resistive random access memory , indium tin oxide , optoelectronics , oxide , heterojunction , transparent conducting film , transmittance , tin , resistive touchscreen , electrical conductor , nanotechnology , composite material , thin film , electrode , electrical engineering , metallurgy , chemistry , engineering
Thermally stable and transparent resistive random access memories (T‐RRAM) are developed by G. Liu, R.‐W. Li, and co‐workers on page 2171. Based on ion migration and formation of metallic conductive filaments in an indium–tin oxide/hafnium oxide/indium–tin oxide sandwich structure, the T‐RRAM device demonstrates great optical transmittance, a robust antithermal shock capability, and stable resistive switching behaviors that are promising for outer‐space applications under extreme working conditions.