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Nanowires: Decoupling Diameter and Pitch in Silicon Nanowire Arrays Made by Metal‐Assisted Chemical Etching (Adv. Funct. Mater. 1/2014)
Author(s) -
Yeom Junghoon,
Ratchford Daniel,
Field Christopher R.,
Brintlinger Todd H.,
Pehrsson Pehr E.
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201470005
Subject(s) - materials science , nanowire , etching (microfabrication) , isotropic etching , nanotechnology , reactive ion etching , silicon , layer (electronics) , plasma etching , lithography , decoupling (probability) , optoelectronics , control engineering , engineering
A combination of metal‐assisted chemical etching and nanosphere lithography is used by P. E. Pehrsson and co‐workers to make vertically aligned, crystalline silicon nanowire arrays over multiple cm 2 areas. On page 106, these relatively smooth nanowires are 55 nm in diameter and are separated from each other by 490 nm. The smoothness and large pitch‐to‐diameter ratio are achieved through large‐scale reduction (∼90%) of the nanospheres by carefully controlled inductively coupled plasma etching, a Ti adhesion layer to enhance the lift‐off yield of the catalyst layer, and optimized catalyzed etching parameters.