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Doped Organic Semiconductors: Trap‐Filling, Impurity Saturation, and Reserve Regimes
Author(s) -
Tietze Max L.,
Pahner Paul,
Schmidt Kathleen,
Leo Karl,
Lüssem Björn
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201404549
Subject(s) - materials science , doping , organic semiconductor , dopant , semiconductor , organic electronics , field effect transistor , optoelectronics , sublimation (psychology) , fermi level , electronics , nanotechnology , transistor , saturation (graph theory) , impurity , condensed matter physics , engineering physics , electrical engineering , electron , physics , chemistry , organic chemistry , psychology , mathematics , voltage , quantum mechanics , combinatorics , psychotherapist , engineering
A typical human being carries billions of silicon‐based field‐effect transistors in his/her pockets. What makes these transistors work is Fermi level control, both by doping and field effect. Organic semiconductors are the core of a novel flexible electronics age, but the key effect of doping is still little understood. Here, precise handling is demonstrated for molar doping ratios as low as 10 −5 in p‐ and n‐doped organic thin‐films by vacuum co‐sublimation, allowing comprehensive studying of the Fermi level control over the whole electronic gap of an organic semiconductor. In particular, dopant saturation and reserve regimes are observed for the first time in organic semiconductors. These results will allow for completely new design rules of organic transistors with improved long term stability and precise parameter control.