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Layer‐by‐Layer Conjugated Extension of a Semiconducting Polymer for High‐Performance Organic Field‐Effect Transistor
Author(s) -
Jang Mi,
Kim Se Hyun,
Lee HanKoo,
Kim YunHi,
Yang Hoichang
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201403497
Subject(s) - materials science , conjugated system , organic field effect transistor , thiophene , intermolecular force , polymer , electron mobility , active layer , annealing (glass) , alkyl , organic solar cell , nanorod , field effect transistor , layer (electronics) , nanotechnology , transistor , optoelectronics , thin film transistor , organic chemistry , composite material , molecule , chemistry , physics , quantum mechanics , voltage
A donor–acceptor (D–A) semiconducting copolymer, PDPP‐TVT‐29, comprising a diketopyrrolopyrrole (DPP) derivative with long, linear, space‐separated alkyl side‐chains and thiophene vinylene thiophene (TVT) for organic field‐effect transistors (OFETs) can form highly π‐conjugated structures with an edge‐on molecular orientation in an as‐spun film. In particular, the layer‐like conjugated film morphologies can be developed via short‐term thermal annealing above 150 °C for 10 min. The strong intermolecular interaction, originating from the fused DPP and D–A interaction, leads to the spontaneous self‐assembly of polymer chains within close proximity (with π‐overlap distance of 3.55 Å) and forms unexpectedly long‐range π‐conjugation, which is favorable for both intra‐ and intermolecular charge transport. Unlike intergranular nanorods in the as‐spun film, well‐conjugated layers in the 200 °C‐annealed film can yield more efficient charge‐transport pathways. The granular morphology of the as‐spun PDPP‐TVT‐29 film produces a field‐effect mobility ( μ FET ) of 1.39 cm 2 V −1 s −1 in an OFET based on a polymer‐treated SiO 2 dielectric, while the 27‐Å‐step layered morphology in the 200 °C‐annealed films shows high μ FET values of up to 3.7 cm 2 V −1 s −1 .