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Ultraviolet‐Light‐Induced Reversible and Stable Carrier Modulation in MoS 2 Field‐Effect Transistors
Author(s) -
Singh Arun Kumar,
Andleeb Shaista,
Singh Jai,
Dung Hoang Tien,
Seo Yongho,
Eom Jonghwa
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201402231
Subject(s) - materials science , optoelectronics , ultraviolet , transistor , field effect transistor , doping , threshold voltage , charge carrier , ultraviolet light , semiconductor , bilayer , electron mobility , voltage , electrical engineering , membrane , chemistry , biochemistry , engineering
The tuning of charge carrier concentrations in semiconductor is necessary in order to approach high performance of the electronic and optoelectronic devices. It is demonstrated that the charge‐carrier density of single‐layer (SL), bilayer (BL), and few‐layer (FL) MoS 2 nanosheets can be finely and reversibly tuned with N 2 and O 2 gas in the presence of deep‐ultraviolet (DUV) light. After exposure to N 2 gas in the presence of DUV light, the threshold voltages of SL, BL, and FL MoS 2 field‐effect transistors (FETs) shift towards negative gate voltages. The exposure to N 2 gas in the presence of DUV light notably improves the drain‐to‐source current, carrier density, and charge‐carrier mobility for SL, BL, and FL MoS 2 FETs. Subsequently, the same devices are exposed to O 2 gas in the presence of DUV light for different periods and the electrical characteristics are completely recovered after a certain time. The doping by using the combination of N 2 and O 2 gas with DUV light provides a stable, effective, and facile approach for improving the performance of MoS 2 electronic devices.