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Reversible Ferromagnetic Phase Transition in Electrode‐Gated Manganites
Author(s) -
Cui Bin,
Song Cheng,
Wang Guangyue,
Yan Yinuo,
Peng Jingjing,
Miao Jinghui,
Mao Haijun,
Li Fan,
Chen Chao,
Zeng Fei,
Pan Feng
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201402007
Subject(s) - colossal magnetoresistance , materials science , manganite , condensed matter physics , phase transition , magnetoresistance , ferromagnetism , metal–insulator transition , quantum phase transition , magnetic field , metal , physics , quantum mechanics , metallurgy
The electronic phase transition has been considered as a dominant factor in the phenomena of colossal magnetoresistance, metal‐insulator transition, and exchange bias in correlated electron systems. However, the effective manipulation of the electronic phase transition has remained a challenging issue. Here, the reversible control of ferromagnetic phase transition in manganite films through ionic liquid gating is reported. Under different gate voltages, the formation and annihilation of an insulating and magnetically hard phase in the magnetically soft matrix, which randomly nucleates and grows across the film instead of initiating at the surface and spreading to the bottom, is directly observed. This discovery provides a conceptually novel vision for the electric‐field tuning of phase transition in correlated oxides. In addition to its fundamental significance, the realization of a reversible metal‐insulator transition in colossal magnetoresistance materials will also further the development of four‐state memories, which can be manipulated by a combination of electrode gating and the application of a magnetic field.