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Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor
Author(s) -
Xiong Kanglin,
Park Sung Hyun,
Song Jie,
Yuan Ge,
Chen Danti,
Leung Benjamin,
Han Jung
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201401438
Subject(s) - materials science , optoelectronics , photocurrent , photoconductivity , gallium nitride , transistor , field effect transistor , etching (microfabrication) , nanotechnology , electrical engineering , layer (electronics) , voltage , engineering
Large‐area, free‐standing and single‐crystalline GaN nanomembranes are prepared by electrochemical etching from epitaxial layers. As‐prepared nanomembranes are highly resistive but can become electronically active upon optical excitation, with an excellent electron mobility. The interaction of excited carriers with surface states is investigated by intensity‐dependent photoconductivity gain and temperature‐dependent photocurrent decay. Normally off enhancement‐type GaN nanomembrane MOS transistors are demonstrated, suggesting that GaN could be used in flexible electronics for high power and high frequency applications.