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Nanoscale Resistive Switching in Amorphous Perovskite Oxide ( a‐ SrTiO 3 ) Memristors
Author(s) -
Nili Hussein,
Walia Sumeet,
Balendhran Sivacarendran,
Strukov Dmitri B.,
Bhaskaran Madhu,
Sriram Sharath
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201401278
Subject(s) - materials science , memristor , amorphous solid , perovskite (structure) , resistive random access memory , neuromorphic engineering , nanoindentation , nanoscopic scale , optoelectronics , nanotechnology , oxide , non volatile memory , thin film , electronic engineering , electrical engineering , composite material , voltage , computer science , chemical engineering , chemistry , organic chemistry , machine learning , artificial neural network , engineering , metallurgy
Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO 3 : a‐ STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal‐oxide‐metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a‐ STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10 3 –10 4 ) switching ratios, good endurance (>10 6 I–V sweep cycles), and retention with less than 1% change in resistance over repeated 10 5 s long READ cycles. Nano‐contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano‐switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin a‐ STO/metal stacks highlight the impact of mechanical stress on the modulation of non‐linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems.