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Low Temperature Stabilization of Nanoscale Epitaxial Spinel Ferrite Thin Films by Atomic Layer Deposition
Author(s) -
Coll Mariona,
Montero Moreno Josep M.,
Gazquez Jaume,
Nielsch Kornelius,
Obradors Xavier,
Puig Teresa
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201400517
Subject(s) - materials science , atomic layer deposition , spintronics , spinel , thin film , epitaxy , nanoscopic scale , microelectronics , nanotechnology , optoelectronics , analytical chemistry (journal) , layer (electronics) , chemical engineering , ferromagnetism , condensed matter physics , metallurgy , chemistry , physics , chromatography , engineering
In this work heteroepitaxial stabilization with nanoscale control of the magnetic Co 2 FeO 4 phase at 250 °C is reported. Ultrasmooth and pure Co 2 FeO 4 thin films (5–25 nm) with no phase segregation are obtained on perovskite SrTiO 3 single crystal (100) and (110) oriented substrates by atomic layer deposition (ALD). High resolution structural and chemical analyses confirm the formation of the Co‐rich spinel metastable phase. The magneto‐crystalline anisotropy of the Co 2 FeO 4 phase is not modified by stress anisotropy because the films are fully relaxed. Additionally, high coervice fields, 15 kOe, and high saturation of magnetization, 3.3 μ B per formula unit (at 10 K), are preserved down to 10 nm. Therefore, the properties of the ALD‐Co 2 FeO 4 films offer many possibilities for future applications in sensors, actuators, microelectronics, and spintronics. In addition, these results are promising for the use of ALD compared to the existing thin‐film deposition techniques to stabilize epitaxial multicomponent materials with nanoscale control on a wide variety of substrates for which the processing temperature is a major drawback.