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Epitaxial Growth of PbSe Quantum Dots on MoS 2 Nanosheets and their Near‐Infrared Photoresponse
Author(s) -
Schornbaum Julia,
Winter Benjamin,
Schießl Stefan P.,
Gannott Florentina,
Katsukis Georgios,
Guldi Dirk M.,
Spiecker Erdmann,
Zaumseil Jana
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201400330
Subject(s) - materials science , quantum dot , photodetector , epitaxy , high resolution transmission electron microscopy , passivation , optoelectronics , polyethylene terephthalate , responsivity , infrared , nanotechnology , transmission electron microscopy , optics , composite material , physics , layer (electronics)
A facile one‐pot synthesis of hybrid materials consisting of PbSe quantum dots (QDs) that grow epitaxially on MoS 2 nanoflakes resulting in three equivalent orientation variants of the PbSe QDs with respect to the MoS 2 lattice is demonstrated. The epitaxial growth and cross‐sectional high‐resolution transmission electron microscopy (HRTEM) investigations verify a direct and linker‐free contact between the quantum dots and the transition metal dichalcogenide (TMD) nanoflakes, while maintaining surface passivation of the PbSe with oleic acid ligands on the outside. Solution‐processed photodetectors based on PbSe‐MoS 2 hybrids exhibit stable photoconduction when illuminated with near‐IR light (wavelength > 1200 nm) without any laborious ligand‐exchange steps. Flexible devices fabricated on polyethylene terephthalate (PET) substrates show excellent stability upon repeated bending. These hybrid materials are air‐stable and solution‐processable at low temperatures and thus promising for low‐cost flexible near‐IR photodetectors.