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High Performance Mg 2 (Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties
Author(s) -
Jiang Guangyu,
He Jian,
Zhu Tiejun,
Fu Chenguang,
Liu Xiaohua,
Hu Lipeng,
Zhao Xinbing
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201400123
Subject(s) - materials science , doping , dopant , thermoelectric effect , crystallographic defect , thermoelectric materials , solid solution , figure of merit , thermal conductivity , analytical chemistry (journal) , nanotechnology , crystallography , metallurgy , optoelectronics , thermodynamics , chemistry , composite material , chromatography , physics
A point defect chemistry approach to improving thermoelectric (TE) properties is introduced, and its effectiveness in the emerging mid‐temperature TE material Mg 2 (Si,Sn) is demonstrated. The TE properties of Mg 2 (Si,Sn) are enhanced via the synergistical implementation of three types of point defects, that is, Sb dopants, Mg vacancies, and Mg interstitials in Mg 2 Si 0.4 Sn 0.6‐ x Sb x with high Sb content ( x > 0.1), and it is found that i) Sb doping at low ratios tunes the carrier concentration while it facilitates the formation of Mg vacancies at high doping ratios ( x > 0.1). Mg vacancies act as acceptors and phonon scatters; ii) the concentration of Mg vacancies is effectively controlled by the Sb doping ratio; iii) excess Mg facilitates the formation of Mg interstitials that also tunes the carrier concentration; vi) at the optimal Sb‐doping ratio near x ≈ 0.10 the lattice thermal conductivity is significantly reduced, and a state‐of‐the‐art figure of merit ZT > 1.1 is attained at 750 K in 2 at% Zn doped Mg 2 Si 0.4 Sn 0.5 Sb 0.1 specimen. These results demonstrate the significance of point defects in thermoelectrics, and the promise of point defect chemistry as a new approach in optimizing TE properties.