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Flexible Transistors: Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers (Adv. Funct. Mater. 39/2013)
Author(s) -
Chang HsuanChun,
Liu ChengLiang,
Chen WenChang
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201370194
Subject(s) - library science , materials science , engineering physics , computer science , nanotechnology , engineering
Electrospun P3HT:Au hybrid nanofibers are employed by W.‐C. Chen and co‐workers to fabricate a nonvolatile transistor memory device. On page 4960 , using hybrid semiconducting nanofiber as channels and functionalized Au nanoparitcles as potential wells, it is demonstrated how charges can be stored or erased. The controllable storage density of high‐performance hybrid nanofiber devices could be used in future plastic information storage.