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Flexible Electronics: High‐Speed, Low‐Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors (Adv. Funct. Mater. 14/2013)
Author(s) -
Nasr Babak,
Wang Di,
Kruk Robert,
Rösner Harald,
Hahn Horst,
Dasgupta Subho
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201370068
Subject(s) - materials science , nanowire , electrolyte , transistor , electrode , field effect transistor , optoelectronics , nanotechnology , gate dielectric , dielectric , threshold voltage , semiconductor , oxide , voltage , electrical engineering , metallurgy , engineering , chemistry
Part of an enhanced‐mode electrolyte‐gated nanowire channel metal oxide semiconductor field‐effect transistor (MOSFET) is illustrated. As reported by Subho Dasgupta and co‐workers on page 1750 , the complete nanowire and a part of the in‐plane gate electrode are covered with a printed droplet of composite solid polymer electrolyte, working as a dielectric. A positive gate bias attracts cations (Li + ) towards the nanowire channel resulting in accumulation of charge carriers and driving it to the conducting (ON) state.