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Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)
Author(s) -
Kim Gun Hwan,
Lee Jong Ho,
Ahn Youngbae,
Jeon Woojin,
Song Seul Ji,
Seok Jun Yeong,
Yoon Jung Ho,
Yoon Kyung Jean,
Park Tae Joo,
Hwang Cheol Seong
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201370054
Subject(s) - resistive random access memory , crossbar switch , materials science , resistor , schottky diode , optoelectronics , schematic , resistive touchscreen , diode , memory cell , electrical engineering , voltage , transistor , engineering
Fully functional crossbar array ReRAM devices with 32 × 32 memory block size are reported by Cheol Seong Hwang and co‐workers on page 1440 . The schematic structure of the 1 diode‐1 resistor crossbar array devices is shown in the image. The adopted Schottky diode, serially connected with a unipolar resistive switching memory element, suppresses the sneak‐current flow. It also controls the conducting path formation during switching and protects the memory from noise during retention.