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Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics
Author(s) -
Chang Seongpil,
Do Yun Seon,
Kim JongWoo,
Hwang Bo Yeon,
Choi Jinnil,
Choi ByungHyun,
Lee YunHi,
Choi Kyung Cheol,
Ju ByeongKwon
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201304114
Subject(s) - materials science , thin film transistor , optoelectronics , plasmon , transistor , amorphous solid , photosensitivity , indium tin oxide , indium , thin film , nanotechnology , layer (electronics) , electrical engineering , chemistry , organic chemistry , voltage , engineering
A novel amorphous‐indium‐gallium‐zinc‐oxide‐based application with stable switching characteristics under negative bias illumination is shown. Metallic nanohole‐based plasmonic filters are used for tuning the spectrum of the ambient light source, and the photosensitivity of the a‐IGZO‐TFT is investigated within a selectively controlled spectral range. The suggested thin‐film transistors show greatly improved stability even in a negative bias illumination stress environment.

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