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Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO
Author(s) -
Musselman Kevin P.,
AlbertSeifried Sebastian,
Hoye Robert L. Z.,
Sadhanala Aditya,
MuñozRojas David,
MacManusDriscoll Judith L.,
Friend Richard H.
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303994
Subject(s) - materials science , exciton , doping , dopant , photocurrent , dissociation (chemistry) , zinc , nitrogen , acceptor , polymer , photochemistry , electron acceptor , inorganic chemistry , optoelectronics , chemistry , condensed matter physics , physics , organic chemistry , metallurgy , composite material
Exciton dissociation at the zinc oxide/poly(3‐hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10 19 cm −3 to 10 17 cm −3 , is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light‐induced de‐trapping of electrons from the surface of the nitrogen‐doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.