z-logo
Premium
Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors
Author(s) -
Cheng ShiauShin,
Huang PengYi,
Ramesh Mohan,
Chang HsiuChieh,
Chen LiMing,
Yeh ChiaMing,
Fung ChunLin,
Wu MengChyi,
Liu ChungChi,
Kim Choongik,
Lin HongCheu,
Chen MingChou,
Chu ChihWei
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303378
Subject(s) - ambipolar diffusion , materials science , heterojunction , organic semiconductor , transistor , electron mobility , semiconductor , optoelectronics , electron , nanotechnology , electrical engineering , voltage , physics , quantum mechanics , engineering
Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[ d , d ']thieno[3,2‐ b ;4,5‐ b ']dithiophene (P‐BTDT) : 2‐(4‐ n ‐octylphenyl)benzo[ d , d ']thieno[3,2‐ b ;4,5‐ b ']dithiophene (OP‐BTDT)] and C 60 . Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p ‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm 2 V −1 s −1 . An optimized blending of P‐BTDT:OP‐BTDT with the n ‐channel semiconductor, C 60 , results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm 2 V −1 s −1 , respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom