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Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors
Author(s) -
Cheng ShiauShin,
Huang PengYi,
Ramesh Mohan,
Chang HsiuChieh,
Chen LiMing,
Yeh ChiaMing,
Fung ChunLin,
Wu MengChyi,
Liu ChungChi,
Kim Choongik,
Lin HongCheu,
Chen MingChou,
Chu ChihWei
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303378
Subject(s) - ambipolar diffusion , materials science , heterojunction , organic semiconductor , transistor , electron mobility , semiconductor , optoelectronics , electron , nanotechnology , electrical engineering , voltage , physics , quantum mechanics , engineering
Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[ d , d ']thieno[3,2‐ b ;4,5‐ b ']dithiophene (P‐BTDT) : 2‐(4‐ n ‐octylphenyl)benzo[ d , d ']thieno[3,2‐ b ;4,5‐ b ']dithiophene (OP‐BTDT)] and C 60 . Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p ‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm 2 V −1 s −1 . An optimized blending of P‐BTDT:OP‐BTDT with the n ‐channel semiconductor, C 60 , results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm 2 V −1 s −1 , respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.