Premium
Thermally Stable Transparent Resistive Random Access Memory based on All‐Oxide Heterostructures
Author(s) -
Shang Jie,
Liu Gang,
Yang Huali,
Zhu Xiaojian,
Chen Xinxin,
Tan Hongwei,
Hu Benlin,
Pan Liang,
Xue Wuhong,
Li RunWei
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303274
Subject(s) - materials science , resistive random access memory , optoelectronics , oxide , indium tin oxide , heterojunction , electrode , tin , tin oxide , hafnium , layer (electronics) , nanotechnology , doping , metallurgy , zirconium , chemistry
An all‐oxide transparent resistive random access memory (T‐RRAM) device based on hafnium oxide (HfO x ) storage layer and indium‐tin oxide (ITO) electrodes is fabricated in this work. The memory device demonstrates not only good optical transmittance but also a forming‐free bipolar resistive switching behavior with room‐temperature R OFF / R ON ratio of 45, excellent endurance of ≈5 × 10 7 cycles and long retention time over 10 6 s. More importantly, the HfO x based RRAM carries great ability of anti‐thermal shock over a wide temperature range of 10 K to 490 K, and the high R OFF / R ON ratio of ≈40 can be well maintained under extreme working conditions. The field‐induced electrochemical formation and rupture of the robust metal‐rich conductive filaments in the mixed‐structure hafnium oxide film are found to be responsible for the excellent resistance switching of the T‐RRAM devices. The present all‐oxide devices are of great potential for future thermally stable transparent electronic applications.