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Evidence of Oxygen Ferromagnetism in ZnO Based Materials
Author(s) -
Guglieri Clara,
Céspedes Eva,
Espinosa Ana,
LagunaMarco María Ángeles,
Carmooemi,
Takeda Yukiharu,
Okane Tetsuo,
Nakamura Tetsuya,
GarcíaHernández Mar,
García Miguel Ángel,
Chaboy Jesús
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303087
Subject(s) - spintronics , ferromagnetism , materials science , magnetic circular dichroism , magnetic semiconductor , condensed matter physics , heterojunction , semiconductor , nanotechnology , optoelectronics , spectral line , physics , astronomy
Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor.