Premium
Conductive Transparent TiN x /TiO 2 Hybrid Films Deposited on Plastics in Air Using Atmospheric Plasma Processing
Author(s) -
Dong Siming,
Watanabe Makoto,
Dauskardt Reinhold H.
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201303038
Subject(s) - materials science , amorphous solid , polycarbonate , titanium nitride , plasma enhanced chemical vapor deposition , electrical resistivity and conductivity , annealing (glass) , titanium , plasma , chemical engineering , thin film , plasma processing , tin , nitride , analytical chemistry (journal) , composite material , nanotechnology , metallurgy , layer (electronics) , organic chemistry , engineering , quantum mechanics , electrical engineering , chemistry , physics
The successful deposition of conductive transparent TiN x /TiO 2 hybrid films on both polycarbonate and silicon substrates from a titanium ethoxide precursor is demonstrated in air using atmospheric plasma processing equipped with a high‐temperature precursor delivery system. The hybrid film chemical composition, deposition rates, optical and electrical properties along with the adhesion energy to the polycarbonate substrate are investigated as a function of plasma power and plasma gas composition. The film is a hybrid of amorphous and crystalline rutile titanium oxide phases and amorphous titanium nitride that depend on the processing conditions. The visible transmittance increases from 71% to 83% with decreasing plasma power and increasing nitrogen content of the plasma gas. The film resistivity is in the range of ∼8.5 × 10 1 to 2.4 × 10 5 ohm cm. The adhesion energy to the polycarbonate substrate varies from ∼1.2 to 8.5 J/m 2 with increasing plasma power and decreasing plasma gas nitrogen content. Finally, annealing the film or introducing hydrogen to the primary plasma gas significantly affects the composition and decreases thin‐film resistivity.