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Dissolvable Metals for Transient Electronics
Author(s) -
Yin Lan,
Cheng Huanyu,
Mao Shimin,
Haasch Richard,
Liu Yuhao,
Xie Xu,
Hwang SukWon,
Jain Harshvardhan,
Kang SeungKyun,
Su Yewang,
Li Rui,
Huang Yonggang,
Rogers John A.
Publication year - 2014
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201301847
Subject(s) - materials science , dissolution , electronics , alloy , corrosion , oxide , transient (computer programming) , metal , transistor , thin film transistor , silicon , thermal conduction , chemical engineering , nanotechnology , composite material , optoelectronics , metallurgy , electrical engineering , layer (electronics) , voltage , computer science , engineering , operating system
Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de‐ionized (DI) water and simulated body fluids (Hanks’ solution pH 5–8) are systematically studied, to assess the potential for use of these metals in water‐soluble, that is, physically "transient", electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics.