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p‐Type Beta‐Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties
Author(s) -
Feng Mei,
Luo LinBao,
Nie Biao,
Yu ShuHong
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201300413
Subject(s) - materials science , schottky barrier , schottky diode , optoelectronics , nanotechnology , semiconductor , nanowire , transistor , diode , ionic bonding , ion , voltage , physics , quantum mechanics
β ‐AgVO 3 , as a stable phase and a typical silver vanadium oxide, has performed special ionic and electrical properties. The construction of nanoelectronic devices based on ultralong β ‐AgVO 3 nanoribbons (NRs) is reported, including nano‐field‐effect transistor (nano‐FET) and nano‐Schottky barrier diode (nano‐SBD). Owing to the specific channel structure and ion conductivity, the nano‐FET exhibits typical p‐type semiconductor characteristics and the nano‐SBD with Al contacts performs a prominent rectifying behavior with an on/off ratio of up to 10 3 . Besides, tunable electrical transport properties can be achieved by tailoring the material properties, and it is demonstrated that the bridging NR numbers and diameters have a positive effect on electrical transport properties, while a complex variation trend is observed in the case of surface modification by photo‐irradiation. Electron spin resonance (ESR) spectrum further illuminates that the induced vacancies play an important role on the electrical transport properties of β ‐AgVO 3 nanoribbons. Easy access to the ultralong β ‐AgVO 3 NRs makes them a promising candidate for potential applications in nanoelectronic devices.