Spintronics: Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions (Adv. Funct. Mater. 21/2012) | Zendy

Harada Takayuki | Zendy; Ohkubo Isao | Zendy; Lippmaa Mikk | Zendy; Sakurai Yasuaki | Zendy; Matsumoto Yuji | Zendy; Muto Shunsuke | Zendy; Koinuma Hideomi | Zendy; Oshima Masaharu | Zendy

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Spintronics: Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions (Adv. Funct. Mater. 21/2012)

Author(s) -

Harada Takayuki,

Ohkubo Isao,

Lippmaa Mikk,

Sakurai Yasuaki,

Matsumoto Yuji,

Muto Shunsuke,

Koinuma Hideomi,

Oshima Masaharu

Publication year - 2012

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201290129

Subject(s) - spintronics , tunnel magnetoresistance , materials science , tunnel junction , ferromagnetism , spinplasmonics , insulator (electricity) , condensed matter physics , ballistic conduction , electron , magnetoresistance , spin polarization , optoelectronics , nanotechnology , quantum tunnelling , layer (electronics) , spin hall effect , physics , magnetic field , quantum mechanics

A spin‐polarized‐current generator is a fundamental device in spintronics. As reported on page 4471 , Isao Ohkubo and co‐workers have developed a highperformance spin‐filter tunnel junction by growing an atomic‐layer‐controlled oxide multilayer. In this device, up‐spin electrons can selectively tunnel through a nanometer‐thick ferromagnetic insulator, while down‐spin electrons are reflected. The image shows a false‐colored cross‐sectional transmission electron microscope image of the device.

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