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Spintronics: Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions (Adv. Funct. Mater. 21/2012)
Author(s) -
Harada Takayuki,
Ohkubo Isao,
Lippmaa Mikk,
Sakurai Yasuaki,
Matsumoto Yuji,
Muto Shunsuke,
Koinuma Hideomi,
Oshima Masaharu
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201290129
Subject(s) - spintronics , tunnel magnetoresistance , materials science , tunnel junction , ferromagnetism , spinplasmonics , insulator (electricity) , condensed matter physics , ballistic conduction , electron , magnetoresistance , spin polarization , optoelectronics , nanotechnology , quantum tunnelling , layer (electronics) , spin hall effect , physics , magnetic field , quantum mechanics
A spin‐polarized‐current generator is a fundamental device in spintronics. As reported on page 4471 , Isao Ohkubo and co‐workers have developed a highperformance spin‐filter tunnel junction by growing an atomic‐layer‐controlled oxide multilayer. In this device, up‐spin electrons can selectively tunnel through a nanometer‐thick ferromagnetic insulator, while down‐spin electrons are reflected. The image shows a false‐colored cross‐sectional transmission electron microscope image of the device.