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Organic Electronics: High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory (Adv. Funct. Mater. 14/2012)
Author(s) -
Baeg KangJun,
Khim Dongyoon,
Kim Juhwan,
Yang ByungDo,
Kang Minji,
Jung SoonWon,
You InKyu,
Kim DongYu,
Noh YongYoung
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201290084
Subject(s) - materials science , optoelectronics , nand gate , electronics , flash (photography) , flash memory , electret , transistor , flexible electronics , nanotechnology , electrical engineering , logic gate , composite material , computer science , computer hardware , voltage , optics , physics , engineering
Monolithically inkjet‐printed, flexible 256‐bit polymer NAND flash memory is demonstrated by using a chargeable polymer electret for the memory cell and polystyrene for ground‐ and bit‐line select transistors as a dielectric layer. On page 2915 , Kang‐Jun Baeg, Yong‐Young Noh, and co‐workers report that the first demonstration of an inkjet‐printed, flexible NAND flash memory array may move up the commercialization of organic memory devices.