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Memristors: Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor (Adv. Funct. Mater. 13/2012)
Author(s) -
Wang Zhong Qiang,
Xu Hai Yang,
Li Xing Hua,
Yu Hao,
Liu Yi Chun,
Zhu Xiao Juan
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201290076
Subject(s) - memristor , materials science , amorphous solid , diffusion , ion , optoelectronics , nanotechnology , electrical engineering , crystallography , chemistry , physics , quantum mechanics , engineering , thermodynamics
On page 2759 Hai Yang Xu, Yi Chun Liu, and co‐workers demonstrate an inorganic synapse based on an amorphous InGaZnO memristor. Such a single device, with its inherent learning and memory abilities, bears striking resemblance in certain functions to the biological synapse. In particular, the “learning‐experience” function is obtained for the first time.
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