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Organic Spintronics: The Multistep Tunneling Analogue of Conductivity Mismatch in Organic Spin Valves (Adv. Funct. Mater. 6/2012)
Author(s) -
Tran T. Lan Anh,
Le T. Quyen,
Sanderink Johnny G. M.,
van der Wiel Wilfred G.,
de Jong Michel P.
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201290035
Subject(s) - spintronics , quantum tunnelling , materials science , condensed matter physics , spin (aerodynamics) , magnetoresistance , organic semiconductor , spin valve , conductivity , tunnel magnetoresistance , giant magnetoresistance , spin polarization , layer (electronics) , nanotechnology , ferromagnetism , optoelectronics , quantum mechanics , thermodynamics , physics , electron , magnetic field
Spin‐polarized transport in organic spin valves remains poorly understood, despite their promising properties. On page 1180 , Michel P. de Jong and co‐workers report a joint experimental and modeling study on C 60 ‐based spin valves that constitutes a significant step forward. For spin‐polarized tunneling via multiple intermediate states in the C 60 layer, the magnetoresistance decreases with the number of tunnel steps regardless of the value of the spin life‐time, which is analogous to conductivity mismatch in diffusive semiconductor systems.