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Polarization Dynamics in Ferroelectric Capacitors: Local Perspective on Emergent Collective Behavior and Memory Effects
Author(s) -
K. Vasudevan Rama,
Marincel Daniel,
Jesse Stephen,
Kim Yunseok,
Kumar Amit,
V. Kalinin Sergei,
TrolierMcKinstry Susan
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201203422
Subject(s) - ferroelectricity , materials science , condensed matter physics , capacitor , polarization (electrochemistry) , grain boundary , domain (mathematical analysis) , electric field , perspective (graphical) , domain wall (magnetism) , voltage , physics , optoelectronics , computer science , composite material , magnetic field , magnetization , microstructure , mathematical analysis , chemistry , mathematics , quantum mechanics , artificial intelligence , dielectric
Functional properties of ferroelectric materials depend both on the residual domain states and on the mobility of domain walls in response to the applied electric and stress fields. This paper reviews the use of multidimensional scanning probe microscopy to assess these factors in the time‐ and voltage domains, with an emphasis on the manner in which domain walls respond collectively to stimuli. It is found that in many PbZr 1‐x Ti x O 3 ‐based capacitors, domain wall motion is correlated over length scales that exceed the domain and grain sizes by orders of magnitude, suggesting emergent collective electromechanical behavior. The role of mechanical boundary conditions and field history on the domain wall contributions and the stability of the ferroelectric domain state are discussed.