Premium
All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends
Author(s) -
Khan M. A.,
Bhansali Unnat S.,
Cha Dongkyu,
Alshareef H. N.
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201202724
Subject(s) - materials science , ferroelectricity , pedot:pss , bistability , electrode , poly(3,4 ethylenedioxythiophene) , dielectric , polymer , non volatile memory , ferroelectric polymers , optoelectronics , spin coating , resistive touchscreen , nanoscopic scale , phase (matter) , nanotechnology , composite material , coating , organic chemistry , chemistry , engineering , electrical engineering
All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride–trifluoroethylene (P(VDF‐TrFE)) and n‐type semiconducting [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF‐TrFE) matrix. Highly conducting poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (R rms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high I on / I off ratios (≈3 × 10 3 ), low read voltages (≈5 V), excellent dielectric response at high frequencies ( ϵ r ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s.