Premium
Single Pulse Laser‐Induced Phase Transitions of PLD‐Deposited Ge 2 Sb 2 Te 5 Films
Author(s) -
Lu Hongbing,
Thelander Erik,
Gerlach Jürgen W.,
Decker Ulrich,
Zhu Benpeng,
Rauschenbach Bernd
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201202665
Subject(s) - materials science , fluence , laser , pulsed laser deposition , irradiation , amorphous solid , phase (matter) , nanosecond , optoelectronics , pulse duration , crystallization , optics , thin film , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , physics , organic chemistry , chromatography , nuclear physics
Phase transformations between amorphous and crystallized states are induced by irradiation with a single nanosecond laser pulse in Ge 2 Sb 2 Te 5 films grown by pulsed laser deposition. By adjusting the laser fluence, the two different phases are obtained and can be distinguished by their different optical reflectivity. The effect of laser fluence on the crystalline nature of the films is studied in detail. Large structural differences between the laser‐irradiated and thermally annealed films are revealed, due to the high heating rate and short duration of the laser pulse. X‐ray reflectivity measurements show a density increase of 3.58% upon laser‐induced crystallization.