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A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States
Author(s) -
Fang Yeyu,
Dumas R. K.,
Nguyen T. N. Anh,
Mohseni S. M.,
Chung S.,
Miller C. W.,
Åkerman Johan
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201202319
Subject(s) - spintronics , condensed matter physics , materials science , magnetoresistance , anisotropy , layer (electronics) , magnetic field , giant magnetoresistance , magnetic force microscope , population , nanotechnology , ferromagnetism , magnetization , physics , optics , sociology , demography , quantum mechanics
A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field‐independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first‐order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field‐dependent population of up and down domains in the free layer.