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Improving Spin‐Transport by Disorder
Author(s) -
Chadov Stanislav,
Kiss Janos,
Felser Claudia
Publication year - 2013
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201201693
Subject(s) - materials science , tetragonal crystal system , condensed matter physics , magnetization , spin (aerodynamics) , series (stratigraphy) , transition metal , constructive , semiconductor , magnetic semiconductor , nanotechnology , crystallography , crystal structure , computer science , magnetic field , quantum mechanics , physics , optoelectronics , thermodynamics , paleontology , biochemistry , chemistry , operating system , process (computing) , biology , catalysis
A new scheme dedicated to improving spin‐transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half‐metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn 3 Ga by substituting Mn with a 3d‐transition metal.
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