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Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions
Author(s) -
Harada Takayuki,
Ohkubo Isao,
Lippmaa Mikk,
Sakurai Yasuaki,
Matsumoto Yuji,
Muto Shunsuke,
Koinuma Hideomi,
Oshima Masaharu
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201200985
Subject(s) - tunnel magnetoresistance , materials science , spintronics , heterojunction , ferromagnetism , magnetoresistance , condensed matter physics , epitaxy , tunnel junction , oxide , spin (aerodynamics) , quantum tunnelling , optoelectronics , nanotechnology , magnetic field , metallurgy , physics , layer (electronics) , quantum mechanics , thermodynamics
A high‐performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr 0.8 Ca 0.2 Mn 1‐ y Co y O 3 , is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition‐controlled magnetic hardness.