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Ferroelastic Strain Induced Antiferroelectric‐Ferroelectric Phase Transformation in Multilayer Thin Film Structures
Author(s) -
Mirshekarloo Meysam Sharifzadeh,
Yao Kui,
Sritharan Thirumany
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201200832
Subject(s) - materials science , thin film , antiferroelectricity , ferroelectricity , microstructure , substrate (aquarium) , phase (matter) , shape memory alloy , strain engineering , condensed matter physics , composite material , optoelectronics , nanotechnology , dielectric , oceanography , chemistry , physics , organic chemistry , geology , silicon
Coupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. For thin films deposited on a substrate, their mechanical stress and microstructure are usually determined by the composition and processing of the films and the lattice and thermal mismatch with the substrate. Here it is found that the stress and structure of an antiferroelectric (Pb 0.97 ,La 0.02 )(Zr 0.90 ,Sn 0.05 ,Ti 0.05 )O 3 (PLZST) thin film are changed completely by a ferroelastic strain in a magnetic shape memory (MSM) alloy Ni‐Mn‐Ga (NMG) thin film on the top of the PLZST, despite the existence of the substrate constraint. The ferroelastic strain in the NMG film results in antiferroelectric (AFE) to ferroelectric (FE) phase transformation in the PLZST layer underneath. This finding indicates a different strategy to modulate the structure and function for multilayer thin films and to create unprecedented devices with ferroic thin films.