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New Configuration of Solid‐State Neutron Detector Made Possible with Solution‐Based Semiconductor Processing
Author(s) -
Zhou Huiqiong,
Coates Nelson E.,
HernandezSosa Gerardo,
Moses Daniel
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201200097
Subject(s) - materials science , semiconductor , optoelectronics , detector , fabrication , photoconductivity , semiconductor detector , neutron detection , neutron , particle detector , nanotechnology , optics , physics , nuclear physics , medicine , alternative medicine , pathology
The unique benefit of solution‐based fabrication of solid‐state p‐n junctions is demonstrated for radiation detection. In particular, an in situ inorganic semiconductor synthesis and film deposition facilitates a novel neutron detector configuration consisting of a host inorganic semiconductor matrix impregnated with a guest neutron sensitizing material. Spectroscopic investigations of the structural order of the top detector active layer indicate that it consists of interpenetrating networks of the host semiconductor nanocrystals and sensitizing guest material that self‐assemble during film formation. The host semiconductor network exhibits a good charge transport as evidenced by steady‐state photoconductivity measurements. The detectors developed indicate high sensitivity to ionizing radiation and a demonstrated ability to detecting thermal neutrons.