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Light‐Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes (Adv. Funct. Mater. 20/2011)
Author(s) -
De Suman,
Layek Arunasish,
Raja Archana,
Kadir Abdul,
Gokhale Mahesh R.,
Bhattacharya Arnab,
Dhar Subhabrata,
Chowdhury Arindam
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201190086
Subject(s) - materials science , photoluminescence , optoelectronics , light emitting diode , quantum dot , indium , diode , luminescence , quantum well , indium gallium nitride , nanotechnology , optics , gallium nitride , physics , laser , layer (electronics)
The true‐color photoluminescence microscopy image of an InGaN alloy‐ based quantum‐well LED shows the presence of highly localized emission centers which originate from modulation of the quantum‐well potential landscape along lateral dimensions. On page 3828 , Arindam Chowdhury and co‐workers show that the carrier localization in efficient radiative traps with diverse transition energies results from both local indium compositional fluctuations (orange‐red dots) as well as interface‐morphology related inhomogeneities (green dots).