Organic Field‐Effect Transistors: Direct UV Patterning of Electronically Active Fullerene Films (Adv. Funct. Mater. 19/2011) | Zendy

Wang Jia | Zendy; Larsen Christian | Zendy; Wågberg Thomas | Zendy; Edman Ludvig | Zendy

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Organic Field‐Effect Transistors: Direct UV Patterning of Electronically Active Fullerene Films (Adv. Funct. Mater. 19/2011)

Author(s) -

Wang Jia,

Larsen Christian,

Wågberg Thomas,

Edman Ludvig

Publication year - 2011

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201190081

Subject(s) - materials science , photoresist , fullerene , fabrication , optoelectronics , transistor , nanotechnology , organic field effect transistor , field effect transistor , organic chemistry , voltage , medicine , chemistry , alternative medicine , physics , layer (electronics) , pathology , quantum mechanics

UV light is utilized for the attainment of high‐resolution and electronically active patterns in [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) films with a novel, photoresist‐free method. On page 3723 , Ludvig Edman and co‐workers present the fabrication of patterns by directly exposing selected parts of a solution‐cast PCBM film to UV light. Complex, large‐area PCBM structures with features of 1 μm are obtained, and the patterned material exhibits a high average electron mobility in transistor experiments.

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