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Organic Field‐Effect Transistors: Direct UV Patterning of Electronically Active Fullerene Films (Adv. Funct. Mater. 19/2011)
Author(s) -
Wang Jia,
Larsen Christian,
Wågberg Thomas,
Edman Ludvig
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201190081
Subject(s) - materials science , photoresist , fullerene , fabrication , optoelectronics , transistor , nanotechnology , organic field effect transistor , field effect transistor , organic chemistry , voltage , medicine , chemistry , alternative medicine , physics , layer (electronics) , pathology , quantum mechanics
UV light is utilized for the attainment of high‐resolution and electronically active patterns in [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) films with a novel, photoresist‐free method. On page 3723 , Ludvig Edman and co‐workers present the fabrication of patterns by directly exposing selected parts of a solution‐cast PCBM film to UV light. Complex, large‐area PCBM structures with features of 1 μm are obtained, and the patterned material exhibits a high average electron mobility in transistor experiments.