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Co‐Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G‐Center
Author(s) -
Berhanuddin Dilla D.,
Lourenço Ma A.,
Gwilliam Russell M.,
Homewood Kevin P.
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201103034
Subject(s) - materials science , silicon , lasing threshold , center (category theory) , carbon fibers , photoluminescence , optoelectronics , proton , irradiation , nanotechnology , physics , nuclear physics , chemistry , wavelength , composite number , composite material , crystallography
The optically active carbon related G‐center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G‐center in silicon is reported. The carbon G‐center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G‐center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G‐center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology.