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Conductivity of SU‐8 Thin Films through Atomic Force Microscopy Nano‐Patterning
Author(s) -
MartinOlmos Cristina,
Villanueva L. Guillermo,
van der Wal Peter D.,
Llobera Andreu,
de Rooij Nico F.,
Brugger Jürgen,
PerezMurano Francesc
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201102789
Subject(s) - materials science , fabrication , nanolithography , nanotechnology , nanometre , resist , nanoscopic scale , lithography , nano , thin film , photoresist , dielectric , conductivity , electrode , optoelectronics , composite material , layer (electronics) , medicine , alternative medicine , pathology , chemistry
Processing flexibility and good mechanical properties are the two major reasons for SU‐8 extensive applicability in the micro‐fabrication of devices. In order to expand its usability down to the nanoscale, conductivity of ultra‐thin SU‐8 layers as well as its patterning by AFM are explored. By performing local electrical measurements outstanding insulating properties and a dielectric strength 100 times larger than that of SiO 2 are shown. It is also demonstrated that the resist can be nano‐patterned using AFM, obtaining minimum dimensions below 40nm and that it can be combined with parallel lithographic methods like UV‐lithography. The concurrence of excellent insulating properties and nanometer‐scale patternability enables a valuable new approach for the fabrication of nanodevices. As a proof of principle, nano‐electrode arrays for electrochemical measurements which show radial diffusion and no overlap between different diffusion layers are fabricated. This indicates the potential of the developed technique for the nanofabrication of devices.