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Metal–Organic Hybrid Interface States of A Ferromagnet/Organic Semiconductor Hybrid Junction as Basis For Engineering Spin Injection in Organic Spintronics
Author(s) -
Lach Stefan,
Altenhof Anna,
Tarafder Kartick,
Schmitt Felix,
Ali Md. Ehesan,
Vogel Michael,
Sauther Jens,
Oppeneer Peter M.,
Ziegler Christiane
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201102297
Subject(s) - spintronics , materials science , organic semiconductor , ferromagnetism , spin (aerodynamics) , condensed matter physics , atom (system on chip) , spin diffusion , spin engineering , spinplasmonics , spin pumping , chemical physics , spin polarization , nanotechnology , electron , optoelectronics , spin hall effect , physics , quantum mechanics , computer science , thermodynamics , embedded system
Abstract Electrons in organic semiconductors (OSC) possess remarkably long spin relaxation times. Hybrid spintronic devices that combine OSC with ferromagnetic (FM) substrates are therefore expected to provide a route to devices with improved and new functionalities. A crucial role is played by the FM‐OSC interface which governs the spin injection into the OSC. Using spin‐resolved photoelectron spectroscopy and ab initio calculations we study here such possible injection channels in metal phthalocyanines (MPc). We report the first direct observation of the successful engineering of different spin‐selective hybrid interface states at the Fermi level of a FM‐OSC hybrid junction only by changing the central metal atom of a MPc. Our results demonstrate that tailoring the chemical interaction at the FM‐OSC interface is a promising way to modify the spin injection channels and thus the spin injection capability.