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Electric‐Field‐Assisted Charge Generation and Separation Process in Transition Metal Oxide‐Based Interconnectors for Tandem Organic Light‐Emitting Diodes
Author(s) -
Yang JinPeng,
Xiao Yan,
Deng YanHong,
Duhm Steffen,
Ueno Nobuo,
Lee ShuitTong,
Li YanQing,
Tang JianXin
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201102136
Subject(s) - materials science , optoelectronics , dopant , oled , doping , diode , light emitting diode , oxide , quantum tunnelling , electric field , nanotechnology , layer (electronics) , physics , quantum mechanics , metallurgy
The charge generation and separation process in transition metal oxide (TMO)‐based interconnectors for tandem organic light‐emitting diodes (OLEDs) is explored using data on electrical and spectral emission properties, interface energetics, and capacitance characteristics. The TMO‐based interconnector is composed of MoO 3 and cesium azide (CsN 3 )‐doped 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) layers, where CsN 3 is employed to replace the reactive metals as an n‐dopant due to its air stability and low deposition temperature. Experimental evidences identify that spontaneous electron transfer occurs in a vacuum‐deposited MoO 3 layer from various defect states to the conduction band via thermal diffusion. The external electric‐field induces the charge separation through tunneling of generated electrons and holes from MoO 3 into the neighboring CsN 3 ‐doped BPhen and hole‐transporting layers, respectively. Moreover, the impacts of constituent materials on the functional effectiveness of TMO‐based interconnectors and their influences on carrier recombination processes for light emission have also been addressed.