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Hydrogen Incorporation in III‐N‐V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties
Author(s) -
Trotta Rinaldo,
Polimeni Antonio,
Capizzi Mario
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201102053
Subject(s) - materials science , semiconductor , nanometre , hydrogen , nitride , diffusion , nanotechnology , chemical physics , trapping , irradiation , optoelectronics , thermodynamics , composite material , layer (electronics) , chemistry , ecology , physics , organic chemistry , biology , nuclear physics
The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs 1 ‐x N x , are discussed. The remarkable consequences of hydrogen irradiation include tuneable and reversible changes in the electronic, optical, structural, and electrical properties of these materials. The highly trapping‐limited diffusion of H atoms in dilute nitrides results in the formation of extremely sharp heterointerfaces between H‐containing and H‐free regions of the crystals. This, in turn, offers an unprecedented possibility to tailor the physical properties of a semiconductor chip in its growth plane with nanometer precision. A number of examples are presented and discussed.