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Enhancement of Green Emission from InGaN/GaN Multiple Quantum Wells via Coupling to Surface Plasmons in a Two‐Dimensional Silver Array
Author(s) -
Lu ChengHsueh,
Lan ChiaChun,
Lai YenLin,
Li YunLi,
Liu ChuanPu
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201101814
Subject(s) - materials science , cladding (metalworking) , optoelectronics , photoluminescence , light emitting diode , quantum well , surface plasmon , indium gallium nitride , quantum efficiency , plasmon , coupling (piping) , gallium nitride , diode , layer (electronics) , excitation , optics , nanotechnology , laser , physics , electrical engineering , engineering , metallurgy
A novel approach to enhancing the emission efficiency of InGaN/GaN multiple quantum wells via coupling to surface plasmons (SPs) in a periodic two‐dimensional silver array is demonstrated. A higher internal quantum efficiency and a higher light extraction efficiency are simultaneously achieved by engraving an array of nanoholes into the p‐GaN cladding layer, followed by partial filling with silver. By top excitation and collection from the top of the Ag‐incorporated light emitting diodes (LEDs), a 2.8‐fold enhancement in peak photoluminescence intensity is demonstrated. The proposed nanoengraving technique offers a practical approach to overcoming the limitation of the exponentially decayed SP field without sacrificing the thickness of the p‐GaN layer and to controlling the effective coupling energy. The approach is feasible for high‐power lighting applications.