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n‐GaAs/InGaP/p‐GaAs Core‐Multishell Nanowire Diodes for Efficient Light‐to‐Current Conversion
Author(s) -
Gutsche Christoph,
Lysov Andrey,
Braam Daniel,
Regolin Ingo,
Keller Gregor,
Li ZiAn,
Geller Martin,
Spasova Marina,
Prost Werner,
Tegude FranzJosef
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201101759
Subject(s) - nanowire , materials science , photocurrent , optoelectronics , diode , heterojunction , rectification , electroluminescence , nanotechnology , voltage , physics , layer (electronics) , quantum mechanics
Heterostructure n‐GaAs/InGaP/p‐GaAs core‐multishell nanowire diodes are synthesized by metal‐organic vapor‐phase epitaxy. This structure allows a reproducible, selective wet etching of the individual shells and therefore a simplified contacting of single nanowire p‐i‐n junctions. Nanowire diodes show leakage currents in a low pA range and at a high rectification ratio of 3500 (at ±1V). Pronounced electroluminescence at 1.4 eV is measured at room temperature and gives evidence of the device quality. Photocurrent generation is demonstrated at the complete area of the nanowire p‐i‐n junction by scanning photocurrent microscopy. A solar‐conversion efficiency of 4.7%, an open‐circuit voltage of 0.5 V and a fill factor of 52% are obtained under AM 1.5G conditions. These results will guide the development of nanowire‐based photonic and photovoltaic devices.