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Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments
Author(s) -
Jiang An Quan,
Lee Hyun Ju,
Hwang Cheol Seong,
Scott James F.
Publication year - 2012
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201101521
Subject(s) - nucleation , materials science , condensed matter physics , picosecond , field (mathematics) , current density , atmospheric temperature range , ferroelectricity , current (fluid) , domain wall (magnetism) , domain (mathematical analysis) , thermodynamics , magnetic field , optoelectronics , physics , optics , magnetization , mathematical analysis , laser , mathematics , quantum mechanics , dielectric , pure mathematics
After calculations of various domain‐switching current transients under the pulse from electrical circuit parameters, the field dependence of domain‐switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4–280 K from the height of domain‐switching current in Pb(Zr 0.4 Ti 0.6 )O 3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954 , 95 , 690] and an ultimate domain‐switching current density of 1.4 × 10 8 A cm −1 is extracted at the highest field of 0.20 MV cm −1 . From classical domain‐nucleation models with thermal fluctuations, an ultimate (asymptotic high‐field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink‐nucleation‐rate limited.