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Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
Author(s) -
Cho Byungjin,
Yun JinMun,
Song Sunghoon,
Ji Yongsung,
Kim DongYu,
Lee Takhee
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201101210
Subject(s) - materials science , bistability , transmission electron microscopy , electrical conductor , conductive atomic force microscopy , optoelectronics , thermal conduction , mechanism (biology) , resistive touchscreen , nanotechnology , resistive random access memory , direct imaging , polymer , atomic force microscopy , composite material , optics , electrode , chemistry , engineering , electrical engineering , philosophy , physics , epistemology
We demonstrate bipolar switching of organic resistive memory devices consisting of Ag/polymer/heavily‐doped p‐type poly Si junctions in an 8 × 8 cross‐bar array structure. The bistable switching mechanism appears to be related to the formation and rupture of highly conductive paths, as shown by a direct observation of Ag metallic bridges using transmission electron microscopy and energy‐dispersive X‐ray spectroscopy. Current images of high‐ and low‐conducting states acquired by conducting atomic force microscopy also support this filamentary switching mechanism. The filamentary formation can be described by an electrochemical redox reaction model of Ag. Our results may also be applied to other kinds of organic materials presenting similar switching properties, contributing to the optimization of device scaling or memory performance improvement.