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Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Author(s) -
Menzel Stephan,
Waters Matthias,
Marchewka Astrid,
Böttger Ulrich,
Dittmann Regina,
Waser Rainer
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201101117
Subject(s) - materials science , resistive touchscreen , conductivity , nonlinear system , oxide , kinetics , nanometre , pulse (music) , electrode , voltage , exponential function , current (fluid) , resistive random access memory , oxygen , nanotechnology , optoelectronics , thermodynamics , composite material , electrical engineering , chemistry , physics , mathematical analysis , mathematics , quantum mechanics , metallurgy , engineering
Experimental pulse length–pulse voltage studies of SrTiO 3 memristive cells are reported, which reveal nonlinearities in the switching kinetics of more than nine orders of magnitude. The results are interpreted using an electrothermal 2D finite element model. The nonlinearity arises from a temperature increase in a few‐nanometer‐thick disc‐shaped region at the Ti electrode and a corresponding exponential increase in oxygen‐vacancy mobility. The model fully reproduces the experimental data and it provides essential design rules for optimizing the cell concept of nanoionic resistive memories. The model is generic in nature: it is applicable to all those oxides which become n ‐conducting upon chemical reduction and which show significant ion conductivity at elevated temperatures.