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Cyano‐Substituted Oligo( p ‐phenylene vinylene) Single Crystals: A Promising Laser Material
Author(s) -
Wang Huan,
Li Feng,
Ravia Israel,
Gao Bingrong,
Li Yupeng,
Medvedev Vlad,
Sun Hongbo,
Tessler Nir,
Ma Yuguang
Publication year - 2011
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201100783
Subject(s) - materials science , laser , optoelectronics , phenylene , diode , amplified spontaneous emission , luminescence , electron mobility , scattering , analytical chemistry (journal) , optics , polymer , chemistry , physics , chromatography , composite material
Organic crystals that combine high charge‐carrier mobility and excellent light‐emission characteristics are expected to be of interest for light‐emitting transistors and diodes, and may offer renewed hope for electrically pumped laser action. High‐luminescence‐efficiency cyano‐substituted oligo( p ‐ phenylene vinylene) (CN‐DPDSB) crystals ( η ≈ 95%) grown by the physical vapor transport method is reported here, with high mobilities (at ≈10 −2 cm 2 V −1 s −1 order of magnitude) as measured by time‐of‐flight. The CN‐DPDSB crystals have well‐balanced bipolar carrier‐transport characteristics ( μ hole ≈ 2.5–5.5 × 10 −2 cm 2 V −1 s −1 ; μ electron ≈ 0.9–1.3 × 10 −2 cm 2 V −1 s −1 ) and excellent optically pumped laser properties. The threshold for amplified spontaneous emission (ASE) is about 4.6 μJ per pulse (23 KW cm −2 ), while the gain coefficient at the peak wavelength of ASE and the loss coefficient caused by scattering are ≈35 and ≈1.7 cm −1 , respectively. This indicates that CN‐DPDSB crystals are promising candidates for organic laser diodes.